首页 >T-3622>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheTF3622usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=25A RDS(ON)= | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheTF3622DSisthehighestperformance trenchN-chMOSFETwithextremehighcell density,whichprovideexcellentRDSONand gatechargensformostofthesynchronous buckconverterapplications. TheTF3622DSmeettheRoHSandGreen Productrequirement,100EASguarante | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
Bi-SpectrumAIThermalCamera •Bi-spectrummonitoringwith2MPvisible&QVGAthermal •AIbasedObjectclassificationwithvisiblechannelonly(person) •RemoteTemperatureMonitoringwithin-20~130°Crange •6ofquadrangleROIareasfortemperaturemonitoring •CompactandLight-weightforIndoorpurpose | HANWHAVISIONHanwha Vision Co., Ltd. All rights Reserved. 韩华韩华集团 | HANWHAVISION | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
WorkWiseHeight-AdjustableSit-StandDesktopWorkstation,36x22in.MonitorPlatform | TRIPPLITE Tripp Lite. All Rights Reserved | TRIPPLITE | ||
LMG3622650-V120-mΩGaNFETWithIntegratedDriverandCurrent-SenseEmulation 1Features •650-V120-mΩGaNpowerFET •Integratedgatedriverwithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhighbandwidthand highaccuracy •Cycle-by-cycleovercurrentprotection •OvertemperatureprotectionwithFLTpinreporting | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
LMG3622650-V120-mΩGaNFETWithIntegratedDriverandCurrent-SenseEmulation 1Features •650-V120-mΩGaNpowerFET •Integratedgatedriverwithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhighbandwidthand highaccuracy •Cycle-by-cycleovercurrentprotection •OvertemperatureprotectionwithFLTpinreporting | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
