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2STR2160

Lowvoltagefast-switchingPNPpowertransistor

Description ThedeviceinaPNPtransistormanufacturedusingnew“PB-HCD”(powerbipolarhighcurrentdensity)technology.Theresultingtransistorshowsexceptionalhighgainperformancescoupledwithverylowsaturationvoltage. ThecomplementaryNPNisthe2STR1160. Features ■Verylowcol

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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