首页 >SY8301ABC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
T8301InternetProtocolTelephonePhone-On-A-Chip??IPSolutionDSP Introduction LucentTechnologies’Phone-On-A-ChipIPSolutionisahighlyintegratedsetofICchipsthatformthebasicbuildingblocksforaninternetprotocoltelephone(IPT),residingonalocalareanetwork(LAN). TheIPTpresentlyconsistsoftwoICs—theT8301(IPT_DSP)andtheT8302(IPT_ | agere Agere Systems | agere | ||
TerminatorDie | MOLEX11Molex Electronics Ltd. 莫仕 | MOLEX11 | ||
TerminatorDie | MOLEX11Molex Electronics Ltd. 莫仕 | MOLEX11 | ||
TerminatorDie | MOLEX11Molex Electronics Ltd. 莫仕 | MOLEX11 | ||
HighpowerfactorprimarysidefeedbackLEDconstantcurrentdriverchip | TPOWERShenzhen Tianyuan Semiconductor Co., Ltd. 天源中芯深圳天源中芯半导体有限公司 | TPOWER | ||
SiliconPChannelMOSType(L2-MOSVI) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FIELDEFFECTTRANSISTORSILICONPCHANNELMOSTYPE(U竊뛏OS?? NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=72mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=4.7S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancementmodel:Vth=−0.5to−1.2V | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Lead(Pb)-free •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=25mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=14S(typ.) •Lowleakagecurrent: | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
