400MHz to 2500MHz 쩌W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS

文件：678.37 Kbytes 页数：10 Pages

RFMD

威讯联合

400MHz to 2500MHz 쩌W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS

文件：678.37 Kbytes 页数：10 Pages

RFMD

威讯联合

400MHz to 2500MHz 쩌W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS

文件：678.37 Kbytes 页数：10 Pages

RFMD

威讯联合

400MHz to 2500MHz 쩌W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS

文件：678.37 Kbytes 页数：10 Pages

RFMD

威讯联合

400MHz to 2500MHz 쩌W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS

文件：678.37 Kbytes 页数：10 Pages

RFMD

威讯联合

400 - 2500 MHz, 0.25 Watt Medium Power GaAs HBT Amplifier With Active Bias

Qorvo's SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to waf • Lower RTH for increased MTTF\n• On-Chip Active Bias Control\n• Single 5V Supply\n• Excellent Linearity: +43dBm typical OIP3 at 1960MHz\n• High P1dB +25dBm Typical\n• High Gain:+18.5dB at 850MHz\n• Efficient: Consumes Only 575mW;

Qorvo

威讯联合

400 - 2500 MHz, 0.25 Watt Medium Power GaAs HBT Amplifier With Active Bias

Qorvo's SXA389Z amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafe • On-Chip Active Bias Control, Single 5V Supply\n• High Output 3rd Order Intercept:+42 to +44dBm Typical\n• High P1dB :+25dBm Typical\n• High Gain:+19dB at 850MHz\n• High Efficiency: Consumes Only 600mW\n• Surface-Mountable Power Plastic Package;

Qorvo

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