丝印：SW88N60K2；Package：TO-247；N-channel Enhanced mode TO-247 MOSFET

Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 188nC) ⚫ Improved dv/dt Capability ⚫ 100 Avalanche Tested ⚫ Application: Solar/PV inverter、Servicer、 Telecom、PC power、UPS、EV-charger General Description This power MOSFET is produced with super junction a

文件：672.31 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-247 MOSFET

Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 188nC) ⚫ Improved dv/dt Capability ⚫ 100 Avalanche Tested ⚫ Application: Solar/PV inverter、Servicer、 Telecom、PC power、UPS、EV-charger General Description This power MOSFET is produced with super junction a

文件：672.31 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

SONY
模块SMD

SonySony Corporation

索尼

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