N-channel MOSFET

文件：815.82 Kbytes 页数：7 Pages

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初级开关MOS管

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N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

文件：923.82 Kbytes 页数：7 Pages

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N-channel TO-220F MOSFET

文件：494.13 Kbytes 页数：5 Pages

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N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F MOSFET

文件：724.48 Kbytes 页数：7 Pages

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N-channel Enhanced mode TO-263 MOSFET

文件：617 Kbytes 页数：6 Pages

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N-channel Enhanced mode TO-220F/TO-220SF/TO-251/ TO-252/TO-220 MOSFET

文件：991.14 Kbytes 页数：7 Pages

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N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

文件：1.02449 Mbytes 页数：7 Pages

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丝印：SW7N65DA；Package：TO-252；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

文件：923.82 Kbytes 页数：7 Pages

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丝印：SW7N65DA；Package：TO-262N；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

文件：923.82 Kbytes 页数：7 Pages

SEMIPOWER

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