超结MOS功率管

SVS7N60F(FJ)(D)D2 N沟道增强型高压功率MOSFET采用士兰微电子超结MOS技术平台制造，具有很低的传导损耗和开关损耗。使得功率转换器具有高效，高功率密度，提高热行为。\n\n 此外，SVS7N60F(FJ)(D)D2应用广泛。如，适用于硬/软开关拓扑。\n\n • 7A,600V, RDS(on)(typ.)=0.48W@VGS=10V \n• 创新高压技术\n• 低栅极电荷\n• 较强的雪崩能力\n• 较强的dv/dt能力\n• 较高的峰值电流能力;

Silan

士兰微

N-Channel MOSFET

[SAMWIN] General Description This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characterist

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ETCList of Unclassifed Manufacturers

未分类制造商

N-channel Mosfet

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SEMIPOWER

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：762.33 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技