D-Well系列超级结高压MOSFET

SVS12N80F/FJ/S/FJH/PN  N沟道增强型高压功率MOSFET采用士兰微电子超结MOS技术平台制造，具有很低的传导损耗和开关损耗。使得功率转换器具有高效，高功率密度，提高热行为。\n\n 此外，SVS12N80F/FJ/S/FJH/PN应用广泛。如，适用于硬/软开关拓扑。 • 12A,800V, RDS(on)(typ.)=0.37W@VGS=10V \n• 低栅极电荷\n• 较强的dv/dt能力\n• 较高的峰值电流能力;

Silan

士兰微

12A, 800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand h

文件：202.23 Kbytes 页数：6 Pages

UTC

友顺

800V N-Channel Planar MOSFET

Features RDSON=0.64Ω @Vgs=10V, Id=6A Low gate Charge(typical 58.2nC) Low Crss (typical 6.5pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：2.60847 Mbytes 页数：7 Pages

SY

顺烨电子

N-Channel Enhancement Mode MOSFET

文件：229.48 Kbytes 页数：4 Pages

DACO

罡境电子