SVF7N60D

平面高压MOS功率管; • 7A，600V，RDS(on)(典型值)=0.96Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt能力\n;

SVF7N60F/S/D  N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。\n\n

SVF7N60T

N-Channel600V(D-S)PowerMOSFET

SW7N60

N-ChannelMOSFET

[SAMWIN] GeneralDescription ThispowerMOSFETisproducedinCHMCwithadvancedVDMOSprocess,planarstripe.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacterist

SW7N60

N-channelMosfet

SW7N60A

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SW7N60D

N-channelTO-220FMOSFET

SW7N60H

N-channelTO-220FMOSFET

SW7N60K

N-channelTO-220F/I-PAKMOSFET

SW7N60R

N-channelTO-220MOSFET

SWF7N60A

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi