平面高压MOS功率管

SVF4N70F/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及元胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。\n\n • 4A，700V，RDS(on)(典型值)=2.5Ω@VGS=10V\n• 低反向传输电容\n• 提升了dv/dt能力\n;

Silan

士兰微

N-channel Enhanced mode TO-251/TO-252/TO-220F MOSFET

文件：1.09998 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel Enhancement mode TO-220F/TO-251/TO-252 MOSFET

文件：744.95 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED,Charge, Adaptor General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This techno

文件：1.05236 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技