F-CellTM系列高压MOSFET

\n\n SVF1N65MJ  N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS   工艺技术制造。先进的工艺及原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。\n\n • 1A，650V，RDS(on)(典型值)=9.8Ω@VGS=10V\n• 低反向传输电容\n• 提升了dv/dt 能力\n;

Silan

士兰微

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

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ETCList of Unclassifed Manufacturers

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1.2A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po

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UTC

友顺

N-CHANNEL MOSFET

DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

文件：434.49 Kbytes 页数：6 Pages

ZSELEC

淄博圣诺