N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：249.25 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET

ST

意法半导体

N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：409.39 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b

文件：409.39 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体