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60N3LH5

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STD60N3LH5

N-channel30V,0.0072廓,48ADPAK,IPAK,TO-220STripFET??VPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD60N3LH5

N-channel30V,0.0072廓,48A-DPAK-IPAKSTripFET??VPowerMOSFET

Description ThisSTripFET™VPowerMOSFETtechnologyisamongthelatestimprovements,whichhavebeenespeciallytailoredtoachieveverylowon-stateresistanceprovidingalsooneofthebest-in-classFOM. Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Ver

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP60N3LH5

N-channel30V,0.0072廓,48ADPAK,IPAK,TO-220STripFET??VPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP60N3LH5

N-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STU60N3LH5

N-channel30V,0.0072廓,48ADPAK,IPAK,TO-220STripFET??VPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU60N3LH5

N-channel30V,0.0072廓,48A-DPAK-IPAKSTripFET??VPowerMOSFET

Description ThisSTripFET™VPowerMOSFETtechnologyisamongthelatestimprovements,whichhavebeenespeciallytailoredtoachieveverylowon-stateresistanceprovidingalsooneofthebest-in-classFOM. Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Ver

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU60N3LH5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU60N3LH5

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STU60N3LH5-S

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

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