Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 30V 16A 40 @ VGS=4.5V 28 @ VGS=10V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -30V -14A 55 @ VGS=-4.5V 34 @ VGS=-10V

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Samhop

三合微科

Mosfets

Samhop

三合微科

Heatsinks For Power LED Modules

文件：267.48 Kbytes 页数：1 Pages

OHMITE

Heatsinks For Power LED Modules

文件：267.48 Kbytes 页数：1 Pages

OHMITE

GaAs SP4T Absorptive Switch, DC - 3 GHz

Description M/A-COM’s SW-314 is a GaAs MMIC SP4T absorptive switch with an integral silicon ASIC driver. This device is in a 24-lead ceramic surface mount package. These switches exhibit excellent performance from DC to 3 GHz, with very low DC power dissipation. The SW-314 is ideally suited for R

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MACOM