STS3419

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

STS3419

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SWT-3419-LB

WR-34toWR-19WaveguideTaperTransition

Description: ModelSWT-3419-LBisaWR-34toWR-19rectangularwaveguidetapertransition.ThetapertransitionismanufacturedbyeitherEDMmachiningorelectro-formingtechniquestoensurehighaccuracyandaqualitysurfacefinish.ThetransitiononlyinducesafractionofadBinsertionloss

TLP3419

PhotocouplersPhotorelay

Applications •ATE(AutomaticTestEquipment) •High-SpeedLogicICTesters •High-SpeedMemoryTesters •MeasuringInstruments General TheTOSHIBATLP3419isaverysmalloutlinenon-leadedphotorelaysuitableforsurface-mountassembly.The TLP3419consistsofaninfraredLEDoptically

UT3419

20V,3.5AP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTCUT3419isaP-channelenhancementMOSFETprovidingdesignerswithexcellentRDS(ON),lowgatecharge.Thegatevoltageisaslowas2.5V. TheUTCUT3419canbeappliedinPWMapplicationsorusedasaloadswitch. FEATURES *RDS(ON)≤75mΩ@VGS=-10V,ID=-3.5A *RDS(ON)≤

YFW3419

P-ChannelEnhancementMOSFET