High voltage power Schottky rectifier

Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current andforward voltage drop Avalanche specification ECOPACK® compliant component for IPAKand DPAK on demand

文件：484.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Switch-mode Schottky Power Rectifier Surface Mount Power Package

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件：202.39 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SMC

ST

上传：深圳市恒佳微电子有限公司

TO-247

ST

上传：深圳市恒星亚创科技有限公司

TO-247

STMICROELECTRONICS

意法半导体

上传：深圳市弘为电子有限公司