Schottky Barrier Rectifier

FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency ·High Junction Temperature Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：285.49 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY

文件：181.63 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

150 V power Schottky rectifier

Features • High junction temperature capability • Low leakage current • High voltage capabilities • Good trade off between leakage current and forward voltage drop • Low thermal resistance • High frequency operation • ECOPACK®2 compliant for TO-220AB and TO-247, on demand for D²PAK Descr

文件：519.419 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 150V TO247

STMICROELECTRONICS

意法半导体