Power Schottky rectifier

Features  High junction temperature capability  Good trade-off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPACK®2 compliant component for DPAK on demand

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STMICROELECTRONICS

意法半导体

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

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VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：127.95 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

TO-263

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