STP80N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. •Extremelylowgatecharge •Ultralowon-resistance •Lowgateinputresistance A

STP80N10F7

N-channel 100 V, 0.0085 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package; • 极低的栅极电荷\n• 超低导通电阻• 低栅极输入电阻;

该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。\n \n

STP80N10F7

Isc N-Channel MOSFET Transistor

UTT80N10

80A,100VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTCUTT80N10isanN-channelpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),highswitchingspeed,highcurrentcapacityandlowgatecharge. TheUTCUTT80N10issuitableforDC-DCconverters,Off-LineUPS,HighVoltageSynchronous

UTT80N10

N-Channel100-V(D-S)175째CMOSFET

WSR80N10

N-ChannelMOSFETusesadvancedtrenchtechnology

WSR80N10

N-ChMOSFET