STP80N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. •Extremelylowgatecharge •Ultralowon-resistance •Lowgateinputresistance A

STP80N10F7

Isc N-Channel MOSFET Transistor

80N10

N-Channel100-V(D-S)175째CMOSFET

80N10L

N-Channel100-V(D-S)175째CMOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

BR80N10

N-CHANNELMOSFETinaTO-220PlasticPackage

BR80N10

N-ChannelMOSFETusesadvancedtrenchtechnology

BRB80N10

N-CHANNELMOSFETinaTO-263PlasticPackage

DTP80N10

N-ChannelMOSFETusesadvancedtrenchtechnology

HMS80N10KA

N-ChannelSuperTrenchPowerMOSFET

IXFC80N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

IXFC80N10

HiPerFETTMMOSFETISOPLUS220

HiPerFET™MOSFETISOPLUS220™ ElectricallyIsolatedBackSurface Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXFH80N10

HiPerFETPowerMOSFETs

VDSS=100V ID25=80A RDS(on)=12.5mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit

IXFH80N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

IXFH80N10Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

IXFH80N10Q

HiPerFETPowerMOSFETsQ-Class

VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea

IXFT80N10

HiPerFETPowerMOSFETs

VDSS=100V ID25=80A RDS(on)=12.5mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit

IXFT80N10Q

HiPerFETPowerMOSFETsQ-Class

VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea

IXTA80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)

IXTA80N10T

iscN-ChannelMOSFETTransistor

IXTP80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)