STP80N03L-06

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.005Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTED

STP80N03L-06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TF80N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF80N03combinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimize

YFW80N03DF

30VN-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFW80N03NF

30VN-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YJD80N03A

N-ChannelEnhancementModeFieldEffectTransistor

YJD80N03B

N-ChannelEnhancementModeFieldEffectTransistor