STP5NM60

isc N-Channel MOSFET Transistor

FEATURES •DrainCurrent–ID=8A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapplic

D5NM60

N-channel650V@Tjmax,0.9Ω,8AMDmesh™PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK

Description TheMDmesh™isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH™ horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

STD5NM60

N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET

Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STD5NM60

N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET

Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STP601D

STANSON
TO-251/TO-252