STP4NB80中文资料意法半导体数据手册PDF规格书
STP4NB80规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号：
STP4NB80
- 功能描述：
MOSFET RO 512-FQP4N80 3/05
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
ST |
22+ |
TO-220FP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
ST/意法 |
23+ |
NA/ |
16449 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
17+ |
TO-220 |
2500 |
原装现货热卖 |
询价 | ||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
TO-220 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
23+ |
TOTO-220ABNONISOL |
35628 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST |
06+07+ |
TO-220 |
71 |
询价 | |||
ST |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
