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零件编号	下载&订购	功能描述	制造商&上传企业
STP1N120	文件：136.31 Kbytes Page：10 Pages	channel 1200V - 30廓 - 500mA - TO-220 Zener - protected SuperMESH??Power MOSFET Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
1N120	文件：2.79285 Mbytes Page：78 Pages	GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分类制造商
HGTD1N120BNS	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTD1N120BNS	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTD1N120BNS	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTD1N120BNS	文件：312.88 Kbytes Page：2 Pages	TrenchField-StopTechnologyIGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
HGTD1N120CNS	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP1N120BN	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTP1N120BN	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP1N120BN	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTP1N120BND	文件：75.75 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP1N120CN	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTP1N120CND	文件：80.17 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
IXTA1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division
IXTA1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division
IXTP1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division
IXTP1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division
IXTY1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division
IXTY1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division
UG1N120	文件：290.58 Kbytes Page：3 Pages	1200VNPTSERIESN-CHANNELIGBT	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司

详细参数

型号：
STP1N120
制造商：
STMicroelectronics

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	STP1N120	ST/意法	17+	TO220ABNONISOL	31518	原装正品可含税交易	询价
深圳市昌和盛利电子有限公司	STP1N120	ST	23+	TO-220	8795		询价
深圳市特顺芯科技有限公司	STP1N120	ST	08+(pbfree)	TO220ABNONISOL	8866		询价
深圳市勤思达科技有限公司	STP1N120	ST	2015+	TO220A	12500	全新原装,现货库存长期供应	询价
深圳市科恒伟业电子有限公司	STP1N120	ST	1726+	TO-220	6528	只做进口原装正品现货,假一赔十!	询价
深圳市宏捷佳电子科技有限公司	STP1N120	ST	23+	TOTO-220ABNONISOL	33500	全新原装真实库存含13点增值税票!	询价
深圳兆威电子有限公司	STP1N120	ST/意法	23+	TO220ABNONISOL	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市国宇半导体科技有限公司	STP1N120	ST/意法	23+	TO220ABNONISOL	10000	公司只做原装正品	询价
深圳市能创芯电子科技有限公司	STP1N120	ST	23+	TO-220	3000	原装正品假一罚百!可开增票!	询价
深圳市大联智电子有限公司	STP1N120	ST	2022+	SOT-23	7300	原装现货	询价

更多STP1N120供应商更新时间2024-4-27 10:00:00

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