丝印：13N60M2；Package：TO-220；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

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STMICROELECTRONICS

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丝印：13N60DM2；Package：TO-220；N-channel 600 V, 0.310 廓 typ., 11 A MDmesh??DM2 Power MOSFET in a TO-220 package

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STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

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VBSEMI

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N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode\n• Extremely low gate charge and input capacitance\n• Low on-resistance• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

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N沟道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

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