isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 9.6mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 7.8 m廓 typ., 120 A STripFET?줚II Power MOSFET in TO-220FP, I짼PAKFP, H짼PAK-2 and TO-220 packages

Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. Features ■ Ultra low on-resistance ■ 100 avala

文件：1.21928 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. Ultra low on-resistance\n100% avalanche tested;

ST

意法半导体

Standard Size Toggle Switch

文件：2.77001 Mbytes 页数：14 Pages

COPAL

尼得科

N-Channel Enhancement Mode Power MOSFET

Description The GT130N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：687.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT130N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：686.84 Kbytes 页数：6 Pages

GOFORD

谷峰半导体