N Channel Enhancement Mode MOSFET

DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional swi

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STANSON

司坦森

Tranch MOSFET

Stanson

司坦森

(10680 10680) PIXELS 짰3 COLOR CCD LINEAR IMAGE SENSOR

文件：355.04 Kbytes 页数：36 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Valid photocell : (10680 + 10680) staggered pixels × 3 • Photocell’s size : 2.7 μ m × 5.4 μ m • Line spacing : 86.4 μ m (16 lines) Red line - Green line, Green line - Blue line 43.2 μ m (8 lines) Odd line - Even line (for each color) • Color filter : Primary colors (red, green and

文件：436.85 Kbytes 页数：38 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Valid photocell : (10680 + 10680) staggered pixels × 3 • Photocell’s size : 2.7 μ m × 5.4 μ m • Line spacing : 86.4 μ m (16 lines) Red line - Green line, Green line - Blue line 43.2 μ m (8 lines) Odd line - Even line (for each color) • Color filter : Primary colors (red, green and

文件：436.85 Kbytes 页数：38 Pages

RENESAS

瑞萨