STH9NA60FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.69Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHC

STH9NA60FI

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STU9NA60

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION TheMax220TMpackageisanewhighvolumepowerpackageexibitingthesamefootprintastheindustrystandardTO-220,butdesignedtoaccomodatemuchlargersiliconchips,normallysuppliedinbiggerpackages.Theincreaseddiecapacitymakesthedeviceidealtoreducecomponentcou

STW9NA60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STW9NA60

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.69Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHC