丝印：GWT40V60DF；Package：TO-3P；Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

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STMICROELECTRONICS

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Trench gate field-stop IGBT, V series

文件：1.52758 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the posi • Maximum junction temperature: TJ = 175 °C\n• Tail-less switching off\n• VCE(sat) = 1.8 V (typ.) @ IC = 40 A\n• Tight parameters distribution• Safe paralleling\n• Low thermal resistance\n• Very fast soft recovery antiparallel diode;

ST

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Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 283W TO3P-3

STMICROELECTRONICS

意法半导体