STF11NM80FP资料datasheet下载库存现货-114ic电子网

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F11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
I11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
P11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：332.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STB11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：322.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STI11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：331.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STW11NM80	文件：435.48 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市博浩通科技有限公司	STF11NM80FP	ST	23+	TO220	7750	全新原装优势	询价
千层芯半导体(深圳)有限公司	STF11NM80FP	ST	17+	TO-220F	1250	原装现货热卖	询价
深圳市振宏微科技有限公司	STF11NM80FP	ST	23+	TO-220F	10000	专做原装正品,假一罚百!	询价
深圳市芯祺盛科技有限公司	STF11NM80FP	ST	1833+	TO220F	34	原装现货!天天特价!随时可以货!	询价
深圳兆威电子有限公司	STF11NM80FP	ST/意法	23+	TO-220F	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市恒达亿科技有限公司	STF11NM80FP	ST	23+	TO220	3000	全新原装、诚信经营、公司现货销售!	询价
贸泽芯城（深圳）电子科技有限公司	STF11NM80FP	ST/意法		TO220F	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
中科国际电子(深圳)有限公司	STF11NM80FP	ST	22+	10000	66900	原厂原装现货	询价
深圳市赛特兴科技有限公司	STF11NM80FP	ST	23+	10000	16900	正规渠道,只有原装!	询价
中科航电（深圳）电子集团有限公司	STF11NM80FP	ST		10000	36900	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价

更多STF11NM80FP供应商更新时间2024-6-21 18:50:00

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