STD9N10

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STD9N10

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STD9N10-1

Marking：D9N10；Package：IPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STD9N10L

N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

N-CHANNEL100V-0.22Ω-9AIPAK/DPAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.22Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTER

STD9N10T4

Marking：D9N10；Package：DPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STD9N10-1

N-Channel 100-V (D-S) MOSFET

MTD9N10D

POWERMOSFET9AMPS,100VOLTS

MTD9N10E

POWERMOSFET9AMPS,100VOLTS

MTD9N10E

TMOSPOWERFET9.0AMPERES100VOLTSRDS(on)=0.25OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MTD9N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p