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STD9N10

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件:278.05 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STD9N10

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件:129.33 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

STD9N10

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

ST

意法半导体

STD9N10-1

丝印:D9N10;Package:IPAK;N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件:278.05 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STD9N10L

N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.22 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTER

文件:66.12 Kbytes 页数:6 Pages

STMICROELECTRONICS

意法半导体

STD9N10T4

丝印:D9N10;Package:DPAK;N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件:278.05 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STD9N10-1

N-Channel 100-V (D-S) MOSFET

文件:1.05699 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

STD9N10L

N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

ST

意法半导体

详细参数

  • 型号:

    STD9N10

  • 功能描述:

    MOSFET RO 511-STD10NF10 TO-252 N-CH 100V 9A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST/意法
24+
TO-252
20000
只做原厂渠道 可追溯货源
询价
ON
24+
TO-252
504536
免费送样原盒原包现货一手渠道联系
询价
ST
05+
原厂原装
14476
只做全新原装真实现货供应
询价
24+
N/A
1530
询价
SGSTHOMSON
24+
原封装
1580
原装现货假一罚十
询价
ST
2015+
IPAKTO-
12500
全新原装,现货库存长期供应
询价
ST
16+
SMD
8000
原装现货请来电咨询
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
VISHAY/威世
23+
TO220
69820
终端可以免费供样,支持BOM配单!
询价
ST
24+
TO-251/252
6430
原装现货/欢迎来电咨询
询价
更多STD9N10供应商 更新时间2025-10-5 11:04:00