Automotive‑grade N‑channel 950 V, 0.95 Ω typ., 9 A MDmesh K5 Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovati

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STMICROELECTRONICS

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Automotive-grade N-channel 950 V, 0.95 Ohm typ., 9 A MDmesh K5 Power MOSFET in a DPAK package

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • AEC-Q101 qualified \n• Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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STMicroelectronics
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STMICROELECTRONICS

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上传：深圳市壹芯创科技有限公司

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