Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFET H6 Power MOSFET in a DPAK package

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology witha new trench gate structure. The resulting Power MOSFET exhibits very lowRDS(on) in all packages.\n • Designed for automotive applications and AEC-Q101 qualified\n• Very low gate charge• High avalanche ruggedness\n• Logic level;

ST

意法半导体

High avalanche ruggedness

文件：790.59 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFETTM H6 Power MOSFET in a PowerFLAT 5x6 package

Features • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level • Wettable flank package Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trenc

文件：659.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.1011 Mbytes 页数：4 Pages

DOINGTER

杜因特

High avalanche ruggedness

文件：863.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体