NPN Silicon Transistor

Descriptions • Medium power amplifier Features • PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

文件：88.6 Kbytes 页数：3 Pages

AUK

NPN Silicon Transistor

Descriptions • Medium power amplifier Features • PC(Collector power dissipation)=2W (Ceramic substrate of 250 ㎟ ×0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188 • “Green” device and RoHS compliant device • Available in full lead

文件：320.21 Kbytes 页数：5 Pages

KODENSHI

可天士

NPN Silicon Transistor

文件：320.21 Kbytes 页数：5 Pages

KODENSHI

可天士

Power Transistors

Kodenshi-AUK