N沟道650 V、0.32 Ohm典型值、11 A MDmesh M2功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

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Extremely low gate charge

文件：944.46 Kbytes 页数：17 Pages

STMICROELECTRONICS

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Zener-protected

文件：786.63 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.32 typ., 11 A MDmeshTM M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：646.1 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.325 ??typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT??5x6 HV package

文件：947.95 Kbytes 页数：16 Pages

STMICROELECTRONICS

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