isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.0A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.68Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.91 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.17856 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：741.12 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：741.12 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：454.6 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体