Gallium Nitride 50V, 600W,0.6-1GHz RF Power Transistor

Description The STCV10600RBY4 is a 600watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular applications up to 1GHz. It can be configured as asymmetrical Doherty delivering 80-100W average power, according to normal 8-9dB back off. There is no guarantee of performance when this pa

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INNOGRATION

远创达

烧录器

STCSTCmicro Technology Co,.Ltd

宏晶科技北京宏晶科技有限公司

上传：深圳市秉祺电子科技有限公司

TO-3P

Sanken

三垦

上传：深圳市恒达亿科技有限公司

TO-252

ST

上传：深圳市轩嘉盛电子有限公司

TO-252

ST

上传：瀚佳科技(深圳)有限公司