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STB80NF55-06

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件:533.29 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

STB80NF55-06-1

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件:533.29 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

STB80NF55-06T4

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件:533.29 Kbytes 页数:7 Pages

STMICROELECTRONICS

意法半导体

STB80NF55-08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:344.88 Kbytes 页数:2 Pages

ISC

无锡固电

STB80NF55-08

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件:353.3 Kbytes 页数:11 Pages

STMICROELECTRONICS

意法半导体

STB80NF55-08-1

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件:353.3 Kbytes 页数:11 Pages

STMICROELECTRONICS

意法半导体

STB80NF55-08AG

Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D²PAK and TO-220 packages

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically

文件:1.00835 Mbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STB80NF55-08T4

N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件:368.17 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

STB80NF55L-06

N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件:85.93 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

STB80NF55L-08

N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件:320.39 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    STB80NF55

  • 功能描述:

    MOSFET N-CH 55V 80A I2PAK

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    STripFET™

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
ST
1709+
TO-263/D2-PAK
32500
普通
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
STMicroelectronics
2022+
TO-262-3,长引线,I2Pak,TO-26
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
ST
23+
TO2633 D2Pak (2 Leads + Tab) T
8000
只做原装现货
询价
STMicroelectronics
21+
D2PAK
1000
进口原装!长期供应!绝对优势价格(诚信经营)!!
询价
ST
2447
DPAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
STM
25+
TO-263
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST/意法半导体
24+
D2PAK-3
6000
全新原装深圳仓库现货有单必成
询价
ST/意法半导体
21+
D2PAK-3
8860
只做原装,质量保证
询价
更多STB80NF55供应商 更新时间2025-10-4 10:12:00