丝印：STAC4932；Package：STAC780-4B；HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：0912-250；Package：STAC780-2B；LDMOS avionics radar transistor

Features • Excellent thermal stability • Common source configuration • POUT = 250W with 16 dB gain over 960 to 1215 MHz • ST air-cavity STAC packaging technology Applications • Avionics Description The STAC0912-250 is a common source N-channel enhancement-mode lateral fieldeffect RF p

文件：647.82 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate/source voltage range for improved class C operation • In compliance with the European Directive 2002/95/EC Description The STAC10

文件：490.69 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate/source voltage range for improved class C operation • In compliance with the European Directive 2002/95/EC Description The STAC12

文件：330.56 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Excellent thermal stability

Description The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™ Feature

文件：470.01 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

HF/VHF/UHF RF power N-channel MOSFETs

Description The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™ Feature

文件：406.43 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Excellent thermal stability

Description The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. Featur

文件：333 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

HF/VHF/UHF RF power N-channel MOSFETs

Description The STAC2942B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21

文件：580.14 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

HF/VHF/UHF RF power N-channel MOSFETs

Description The STAC2942B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21

文件：580.14 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Excellent thermal stability

Description The STAC2942F is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 250 MHz. Features ■ Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. wi

文件：533.96 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体