Features

• Excellent thermal stability

• Common source configuration

• Integrated ESD protection – HBM Class 2

• POUT (@28 V) = 80 W with 17 dB gain / 70 efficiency @945 MHz

• BeO free package

• In compliance with European Directive 2002/95/EC

Description

The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral

field-effect RF power transistor designed for broadband commercial, avionics and

industrial applications at frequencies up to 1.5 GHz. The device can be used in Class

A, AB and C for all typical modulation formats.

ST9060C属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。意法半导体（ST）集团制造生产的ST9060C晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。