丝印：4460FX；Package：ISOWATT218FX；High voltage fast-switching NPN Power transistor

Description The device is manufactured using high voltage Multi Epitaxial Mesa technology adopting Hollow Emitter structure to enhance switching performances. General features ■ High voltage and high current capability ■ Low spread of dynamic parameters ■ Low base-drive requirements ■ Very h

文件：213.89 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN Power transistor

ST

意法半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Suface Mount Package.

文件：170.04 Kbytes 页数：7 Pages

Samhop

三合微科

P-Channel 30-V (D-S) MOSFET

文件：994.96 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.19066 Mbytes 页数：4 Pages

DOINGTER

杜因特