SST31LF041A-70-4E-WI中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A/043/043A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A/043/043A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs.

FEATURES:

• Monolithic Flash + SRAM ComboMemory

– SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM

– SST31LF043/043A: 512K x8 Flash + 32K x8 SRAM

• Single 3.0-3.6V Read and Write Operations

• Concurrent Operation

– Read from or write to SRAM while Erase/Program Flash

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read

– Standby Current: 10 µA (typical)

• Flash Sector-Erase Capability

– Uniform 4 KByte sectors

• Latched Address and Data for Flash

• Fast Read Access Times:

– SST31LF041/043 Flash: 70 ns SRAM: 70 ns

– SST31LF041A/043A Flash: 300 ns SRAM: 300 ns

• Flash Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Bank-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Bank Rewrite Time: 8 seconds (typical)

• Flash Automatic Erase and Program Timing

– Internal VPP Generation

• Flash End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Packages Available

– 32-lead TSOP (8 x 14 mm) SST31LF041A/043A

– 40-lead TSOP (10 x 14 mm) SST31LF041/043