SST29VE010数据手册贸易商SSTSST-114ic电子网

首页 >SST29VE010>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业
SST29VE010	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010	文件：458.14 Kbytes Page：30 Pages	1 Mbit (128K x8) Page-Write EEPROM	SST Silicon Storage Technology，Inc.
SST29VE010	文件：882.72 Kbytes Page：27 Pages	1 Megabit (128K x 8) Page Mode EEPROM	SST Silicon Storage Technology，Inc.
SST29VE010	文件：267.81 Kbytes Page：26 Pages	1 Megabit (128K x8) Page-Mode EEPROM	SST Silicon Storage Technology，Inc.
SST29VE010-150-4C-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4C-NH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4C-PH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4C-UH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4C-WH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4I-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4I-NH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4I-PH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4I-UH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-150-4I-WH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-200-4C-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-200-4C-NH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-200-4C-PH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-200-4C-UH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-200-4C-WH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.
SST29VE010-200-4I-EH	文件：326.37 Kbytes Page：26 Pages	1 Mbit (128K x8) Page-Mode EEPROM PRODUCTDESCRIPTION The29EE010/29LE010/29VE010are128Kx8CMOSpagemodeEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalterna	SST Silicon Storage Technology，Inc.

12 3 4 5 6 >>>

详细参数

型号：
SST29VE010
功能描述：
闪存 1M(128K x 8) 150ns
RoHS：
否
制造商：
ON Semiconductor
数据总线宽度：
1 bit
存储类型：
Flash
存储容量：
2 MB
结构：
256 K x 8
接口类型：
SPI
电源电压-最大：
3.6 V
电源电压-最小：
2.3 V
最大工作电流：
15 mA
工作温度：
- 40 C to + 85 C
安装风格：
SMD/SMT
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	SST29VE010	SST	2021+	TSOP-32	6800	原厂原装,欢迎咨询	询价
绿盛电子(香港)有限公司	SST29VE010	SST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市凯斯宇科技有限公司	SST29VE010	SST	2022	TSOP-32	5280	原厂原装正品,价格超越代理	询价
中科航电(深圳)半导体技术有限公司	SST29VE010	原装正品		TSOP-32	600	国内领先的集成电路专业配单!量大可发货!可开17%增值	询价
深圳市百视威讯电子科技有限公司	SST29VE010		23+	N/A	48700	正品授权货源可靠	询价
深圳市赛芯源科技有限公司	SST29VE010	SST	19+	TSOP-32	32000	原装正品,现货特价	询价
深圳市保之丰科技有限公司	SST29VE010	SST	21+	TSOP-32	6800		询价
深圳市威尔健半导体有限公司	SST29VE010	SST	23+	TSOP-32	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	SST29VE010	SST	21+	TSOP-32	10000	原装现货假一罚十	询价
深圳廊盛科技有限公司	SST29VE010	SST	2022	TSOP-32	80000	原装现货,OEM渠道,欢迎咨询	询价

更多SST29VE010供应商更新时间2024-4-19 9:30:00

详细参数

相关规格书

相关库存