SST25WF080BT-40E/SN集成电路（IC）的存储器规格书PDF中文资料

SST25WF080BT-40E/SN属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的SST25WF080BT-40E/SN存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Product Description

SST25WF080B is a member of the Serial Flash 25

Series family and feature a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total

system costs. SPI serial flash memory is manufactured

with proprietary, high-performance CMOS

SuperFlash® technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

This Serial Flash significantly improve performance

and reliability, while lowering power consumption. The

device writes (Program or Erase) with a single power

supply of 1.65V-1.95V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy consumed

during any Erase or Program operation is less

than alternative flash memory technologies.

Features

• Single Voltage Read and Write Operations

- 1.65V-1.95V

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High-Speed Clock Frequency

- 40MHz

• Dual Input/Output Support

- Fast-Read Dual-Output Instruction (3BH)

- Fast-Read Dual I/O Instruction (BBH)

• Superior Reliability

- Endurance: 100,000 Cycles

- Greater than 20 years Data Retention

• Ultra-Low Power Consumption:

- Active Read current: 4 mA (typical)

- Standby current: 7 μA (typical)

- Deep Power-down current: 2 μA (typical)

• Flexible Erase Capability

- Uniform 4-Kbyte sectors

- Uniform 64-Kbyte overlay blocks

• Page Program Mode

- 256 bytes/Page

• Fast Erase and Page-Program:

- Chip Erase time: 500 ms (typical)

- Sector Erase time: 40 ms (typical)

- Block Erase time: 80 ms (typical)

- Page Program time: 0.8 ms/ 256 bytes (typical)

• End-of-Write Detection

- Software polling the BUSY bit in STATUS Register

• Hold Pin (HOLD#)

- Suspend a serial sequence without

deselecting the device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of

the STATUS register

• Software Write Protection

- Write protection through Block-Protection bits

in STATUS register

• Temperature Range

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

- AECQ-100 Qualified

• All devices are RoHS compliant