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SSP70N10A

N-Channel Power MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SSP70N10A

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SSP70N10A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

70N10

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

CEB70N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,69A,RDS(ON)=11mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP70N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,69A,RDS(ON)=11mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQA70N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA70N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF70N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF70N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=45A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.023Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB70N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB70N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQH70N10

FQH70N10100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQH70N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.039Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQI70N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP70N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP70N10

57A,100VHeatsinkPlanarN-ChannelPowerMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

FQP70N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF70N10

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF70N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    SSP70N10

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    N-Channel Power MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
TO 220
155351
明嘉莱只做原装正品现货
询价
FAIRCHILD/仙童
17+
TO-220
31518
原装正品 可含税交易
询价
仙童
12+
TO-220
6000
原装现货,欢迎咨询。
询价
仙童
06+
TO-220
1200
自己公司全新库存绝对有货
询价
N/A
5400
询价
FSC
16+
TO-220
10000
全新原装现货
询价
FSC
2020+
TO-220
350000
100%进口原装正品公司现货库存
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
更多SSP70N10供应商 更新时间2024-6-25 19:10:00