玻璃放电管

SURGING

绍鑫

Small and surface mount package

文件：127.43 Kbytes 页数：2 Pages

KODENSHI

可天士

NPN Silicon Transistor

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCEO = 100V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • “Green” device and RoHS compliant device • Available in full lead (Pb)-free device

文件：404.33 Kbytes 页数：6 Pages

KODENSHI

可天士

Triple half-bridge high-voltage gate driver

Features • High voltage rail up to 600 V • Driver current capability: – 200 mA source current @ 25 °C – 350 mA sink current @ 25 °C • dV/dt transient immunity ±50 V/ns • Gate driving voltage range from 9 V to 20 V • Overall input-output propagation delay: 85 ns • Matched propagation delay

文件：406.8 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体