Small Low ON resistance MOSFETs

Polarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 0.2 A \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V ;

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Field-Effect Transistor Silicon N-Channel MOS Type

High Speed Switching Applications Analog Switch Applications • 1.5-V drive • Low ON-resistance RDS(ON) = 5.60Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02Ω (max) (@VGS = 2.5 V)

文件：166.69 Kbytes 页数：5 Pages

TOSHIBA

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

○ High Speed Switching Applications ○ Analog Switch Applications • 1.5Vdrive • Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V)

文件：206.71 Kbytes 页数：5 Pages

TOSHIBA

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