1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers

Features For surface mounted application Metal silicon junction, majority carrier conduction Easy pick and place Low forward voltage drop High surge current capability Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃ Plastic material used carriers Underwriters

文件：48.92 Kbytes 页数：2 Pages

TSC

台湾半导体

SURFACE MOUNT Low VF SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts Forward Current 1.0 Amperes FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surface mounted applications · Low profile package · Built-in strain relied · Metal to silicon rectifier majority carrier c

文件：95.88 Kbytes 页数：8 Pages

MIC

昌福电子

1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers

Features For surface mounted application Metal silicon junction, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 Epitaxial construction High tem

文件：202.66 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

1.0AMP Surface Mount Schottky Barrier Rectifier Easy pick and place

文件：263.59 Kbytes 页数：4 Pages

TSC

台湾半导体

Surface Mount Schottky Barrier Rectifier

文件：198.81 Kbytes 页数：4 Pages

TSC

台湾半导体

1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers

文件：135.7 Kbytes 页数：2 Pages

TSC

台湾半导体

1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers

文件：378.44 Kbytes 页数：2 Pages

TSC

台湾半导体

1.0AMP Surface Mount Schottky Barrier Rectifier

文件：201.89 Kbytes 页数：2 Pages

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台湾半导体

200 Watt, Uni-Directional TVS Diode

Features:  200W peak pulse power dissipation  Excellent clamping capabilities  Very fast response time  Metalized for Wire Bonding  High Reliability tested grades.

文件：162.31 Kbytes 页数：3 Pages

SS

1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers

文件：135.7 Kbytes 页数：2 Pages

TSC

台湾半导体