AOTF22N50

500V,22AN-ChannelMOSFET

GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili

FDP22N50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDP22N50N

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FDP22N50N

N-ChannelMOSFET500V,22A,0.22廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRFBA22N50

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.
SwitchModePowerSupply(SMPS) 2.
UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.
LowGateChargeQgresultsinSimpleDriveRequirement 2.
ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.
FullyCharacterizedCapacitan

IRFBA22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.
SwitchModePowerSupply(SMPS) 2.
UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.
LowGateChargeQgresultsinSimpleDriveRequirement 2.
ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.
FullyCharacterizedCapacitan

IRFBA22N50APBF

HEXFET짰PowerMOSFET

IRFP22N50A

PowerMOSFET

IRFP22N50A

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.23Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IRFP22N50A

PowerMOSFET