P-Channel Enhancement Mode Power Mos.FET

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Dual-N Channel Mode Power MOSFET

文件：151.81 Kbytes 页数：2 Pages

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Dual-N Channel Mode Power MOSFET

文件：151.81 Kbytes 页数：2 Pages

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Dual-N Enhancement Mode Power MOSFET

文件：562.5 Kbytes 页数：4 Pages

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Dual-N Enhancement Mode Power MOSFET

文件：562.5 Kbytes 页数：4 Pages

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50 A, 600 V Fast Power IGBT

• 600 V IGBT Technology\n• Positive Temperature Coefficient for Ease of Paralleling\n• High Current Switching for Motor Drives and Inverters\n• Low Saturation Voltage at High Currents\n• Low Switching Losses\n• High Short Circuit Capability\n• MOS Input, Voltage Controlled\n• Ultra Fast Free Wheelin;

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50 A, 600 V Fast Power IGBT

• 600 V IGBT Technology\n• Positive Temperature Coefficient for Ease of Paralleling\n• High Current Switching for Motor Drives and Inverters\n• Low Saturation Voltage at High Currents\n• Low Switching Losses\n• High Short Circuit Capability\n• MOS Input, Voltage Controlled\n• Ultra Fast Free Wheelin;

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MosFET

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