N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, p

文件：446.74 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：617.17 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：622.03 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：627.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,

文件：154.95 Kbytes 页数：2 Pages

SECOS

喜可士

N-Channel Enhancement Mode Power Mos.FET

文件：684.02 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel Enhancement Mode Power Mos.FET

文件：684.02 Kbytes 页数：4 Pages

SECOS

喜可士

Dual-N Enhancement Mode Power MOSFET

文件：823.24 Kbytes 页数：4 Pages

SECOS

喜可士

Dual N-Channel MOSFET uses advanced trench technology

文件：1.40925 Mbytes 页数：5 Pages

DOINGTER

杜因特

Dual N-Channel 30-V (D-S) MOSFET

文件：1.02752 Mbytes 页数：9 Pages

VBSEMI

微碧半导体